Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors

In this paper, we demonstrate high mobility solution-processed metal-oxide thin-film transistors (TFTs) by using a high-frequency-stable ionic-type hybrid gate dielectric (HGD). The HGD gate dielectric, a blend of sol-gel aluminum oxide (AlO(x)) and poly(4-vinylphenol) (PVP), exhibited high dielectr...

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Detalles Bibliográficos
Autores principales: Heo, Jae Sang, Choi, Seungbeom, Jo, Jeong-Wan, Kang, Jingu, Park, Ho-Hyun, Kim, Yong-Hoon, Park, Sung Kyu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5553520/
https://www.ncbi.nlm.nih.gov/pubmed/28772972
http://dx.doi.org/10.3390/ma10060612

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5553520/
https://www.ncbi.nlm.nih.gov/pubmed/28772972
http://dx.doi.org/10.3390/ma10060612

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