HfSe(2) and ZrSe(2): Two-dimensional semiconductors with native high-κ oxides

The success of silicon as a dominant semiconductor technology has been enabled by its moderate band gap (1.1 eV), permitting low-voltage operation at reduced leakage current, and the existence of SiO(2) as a high-quality “native” insulator. In contrast, other mainstream semiconductors lack stable ox...

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Detalles Bibliográficos
Autores principales: Mleczko, Michal J., Zhang, Chaofan, Lee, Hye Ryoung, Kuo, Hsueh-Hui, Magyari-Köpe, Blanka, Moore, Robert G., Shen, Zhi-Xun, Fisher, Ian R., Nishi, Yoshio, Pop, Eric
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2017
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5553816/
https://www.ncbi.nlm.nih.gov/pubmed/28819644
http://dx.doi.org/10.1126/sciadv.1700481

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5553816/
https://www.ncbi.nlm.nih.gov/pubmed/28819644
http://dx.doi.org/10.1126/sciadv.1700481

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