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HfSe(2) and ZrSe(2): Two-dimensional semiconductors with native high-κ oxides
The success of silicon as a dominant semiconductor technology has been enabled by its moderate band gap (1.1 eV), permitting low-voltage operation at reduced leakage current, and the existence of SiO(2) as a high-quality “native” insulator. In contrast, other mainstream semiconductors lack stable ox...
| Autores principales: | , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Association for the Advancement of Science
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5553816/ https://www.ncbi.nlm.nih.gov/pubmed/28819644 http://dx.doi.org/10.1126/sciadv.1700481 |