Bias Stress and Temperature Impact on InGaZnO TFTs and Circuits

This paper focuses on the analysis of InGaZnO thin-film transistors (TFTs) and circuits under the influence of different temperatures and bias stress, shedding light into their robustness when used in real-world applications. For temperature-dependent measurements, a temperature range of 15 to 85 °C...

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Detalles Bibliográficos
Autores principales: Martins, Jorge, Bahubalindruni, Pydi, Rovisco, Ana, Kiazadeh, Asal, Martins, Rodrigo, Fortunato, Elvira, Barquinha, Pedro
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5554061/
https://www.ncbi.nlm.nih.gov/pubmed/28773037
http://dx.doi.org/10.3390/ma10060680

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5554061/
https://www.ncbi.nlm.nih.gov/pubmed/28773037
http://dx.doi.org/10.3390/ma10060680

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