Temperature dependence of band gap in MoSe(2) grown by molecular beam epitaxy

We report on a temperature-dependent band gap property of epitaxial MoSe(2) ultrathin films. We prepare uniform MoSe(2) films epitaxially grown on graphenized SiC substrates with controlled thicknesses by molecular beam epitaxy. Spectroscopic ellipsometry measurements upon heating sample in ultra-hi...

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Detalles Bibliográficos
Autores principales: Choi, Byoung Ki, Kim, Minu, Jung, Kwang-Hwan, Kim, Jwasoon, Yu, Kyu-Sang, Chang, Young Jun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5557720/
https://www.ncbi.nlm.nih.gov/pubmed/28812234
http://dx.doi.org/10.1186/s11671-017-2266-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5557720/
https://www.ncbi.nlm.nih.gov/pubmed/28812234
http://dx.doi.org/10.1186/s11671-017-2266-7

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