Temperature dependence of band gap in MoSe(2) grown by molecular beam epitaxy

We report on a temperature-dependent band gap property of epitaxial MoSe(2) ultrathin films. We prepare uniform MoSe(2) films epitaxially grown on graphenized SiC substrates with controlled thicknesses by molecular beam epitaxy. Spectroscopic ellipsometry measurements upon heating sample in ultra-high vacuum showed temperature-dependent optical spectra between room temperature to 850 °C. We observed a gradual energy shift of optical band gap depending on the measurement temperature for different film thicknesses. Fitting with the vibronic model of Huang and Rhys indicates that the constant thermal expansion accounts for the steady decrease of band gap. We also directly probe both optical and stoichiometric changes across the decomposition temperature, which should be useful for developing high-temperature electronic devices and fabrication process with the similar metal chalcogenide films. ELECTRONIC SUPPLEMENTARY MATERIAL: The online version of this article (doi:10.1186/s11671-017-2266-7) contains supplementary material, which is available to authorized users.