Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact

Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and show a direct path to capture the energy band diagram of the...

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Detalles Bibliográficos
Autores principales: Baines, Yannick, Buckley, Julien, Biscarrat, Jérôme, Garnier, Gennie, Charles, Matthew, Vandendaele, William, Gillot, Charlotte, Plissonnier, Marc
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5557989/
https://www.ncbi.nlm.nih.gov/pubmed/28811615
http://dx.doi.org/10.1038/s41598-017-08307-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5557989/
https://www.ncbi.nlm.nih.gov/pubmed/28811615
http://dx.doi.org/10.1038/s41598-017-08307-0

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