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Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact

Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and show a direct path to capture the energy band diagram of the...

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Autores principales: Baines, Yannick, Buckley, Julien, Biscarrat, Jérôme, Garnier, Gennie, Charles, Matthew, Vandendaele, William, Gillot, Charlotte, Plissonnier, Marc
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5557989/
https://www.ncbi.nlm.nih.gov/pubmed/28811615
http://dx.doi.org/10.1038/s41598-017-08307-0
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author Baines, Yannick
Buckley, Julien
Biscarrat, Jérôme
Garnier, Gennie
Charles, Matthew
Vandendaele, William
Gillot, Charlotte
Plissonnier, Marc
author_facet Baines, Yannick
Buckley, Julien
Biscarrat, Jérôme
Garnier, Gennie
Charles, Matthew
Vandendaele, William
Gillot, Charlotte
Plissonnier, Marc
author_sort Baines, Yannick
collection PubMed
description Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and show a direct path to capture the energy band diagram of the nitride system. We then apply transparency calculations to describe the forward conduction regime of a III-N heterojunction diode and demonstrate it realizes a tunnel diode, in contrast to its regular Schottky Barrier Diode designation. Thermionic emission is ruled out and instead, a coherent electron tunneling scenario allows to account for transport at room temperature and higher.
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spelling pubmed-55579892017-08-18 Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact Baines, Yannick Buckley, Julien Biscarrat, Jérôme Garnier, Gennie Charles, Matthew Vandendaele, William Gillot, Charlotte Plissonnier, Marc Sci Rep Article Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and show a direct path to capture the energy band diagram of the nitride system. We then apply transparency calculations to describe the forward conduction regime of a III-N heterojunction diode and demonstrate it realizes a tunnel diode, in contrast to its regular Schottky Barrier Diode designation. Thermionic emission is ruled out and instead, a coherent electron tunneling scenario allows to account for transport at room temperature and higher. Nature Publishing Group UK 2017-08-15 /pmc/articles/PMC5557989/ /pubmed/28811615 http://dx.doi.org/10.1038/s41598-017-08307-0 Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Baines, Yannick
Buckley, Julien
Biscarrat, Jérôme
Garnier, Gennie
Charles, Matthew
Vandendaele, William
Gillot, Charlotte
Plissonnier, Marc
Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact
title Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact
title_full Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact
title_fullStr Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact
title_full_unstemmed Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact
title_short Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact
title_sort coherent tunneling in an algan/aln/gan heterojunction captured through an analogy with a mos contact
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5557989/
https://www.ncbi.nlm.nih.gov/pubmed/28811615
http://dx.doi.org/10.1038/s41598-017-08307-0
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