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Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact
Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and show a direct path to capture the energy band diagram of the...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5557989/ https://www.ncbi.nlm.nih.gov/pubmed/28811615 http://dx.doi.org/10.1038/s41598-017-08307-0 |
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author | Baines, Yannick Buckley, Julien Biscarrat, Jérôme Garnier, Gennie Charles, Matthew Vandendaele, William Gillot, Charlotte Plissonnier, Marc |
author_facet | Baines, Yannick Buckley, Julien Biscarrat, Jérôme Garnier, Gennie Charles, Matthew Vandendaele, William Gillot, Charlotte Plissonnier, Marc |
author_sort | Baines, Yannick |
collection | PubMed |
description | Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and show a direct path to capture the energy band diagram of the nitride system. We then apply transparency calculations to describe the forward conduction regime of a III-N heterojunction diode and demonstrate it realizes a tunnel diode, in contrast to its regular Schottky Barrier Diode designation. Thermionic emission is ruled out and instead, a coherent electron tunneling scenario allows to account for transport at room temperature and higher. |
format | Online Article Text |
id | pubmed-5557989 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2017 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-55579892017-08-18 Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact Baines, Yannick Buckley, Julien Biscarrat, Jérôme Garnier, Gennie Charles, Matthew Vandendaele, William Gillot, Charlotte Plissonnier, Marc Sci Rep Article Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and show a direct path to capture the energy band diagram of the nitride system. We then apply transparency calculations to describe the forward conduction regime of a III-N heterojunction diode and demonstrate it realizes a tunnel diode, in contrast to its regular Schottky Barrier Diode designation. Thermionic emission is ruled out and instead, a coherent electron tunneling scenario allows to account for transport at room temperature and higher. Nature Publishing Group UK 2017-08-15 /pmc/articles/PMC5557989/ /pubmed/28811615 http://dx.doi.org/10.1038/s41598-017-08307-0 Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Baines, Yannick Buckley, Julien Biscarrat, Jérôme Garnier, Gennie Charles, Matthew Vandendaele, William Gillot, Charlotte Plissonnier, Marc Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact |
title | Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact |
title_full | Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact |
title_fullStr | Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact |
title_full_unstemmed | Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact |
title_short | Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact |
title_sort | coherent tunneling in an algan/aln/gan heterojunction captured through an analogy with a mos contact |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5557989/ https://www.ncbi.nlm.nih.gov/pubmed/28811615 http://dx.doi.org/10.1038/s41598-017-08307-0 |
work_keys_str_mv | AT bainesyannick coherenttunnelinginanalganalnganheterojunctioncapturedthroughananalogywithamoscontact AT buckleyjulien coherenttunnelinginanalganalnganheterojunctioncapturedthroughananalogywithamoscontact AT biscarratjerome coherenttunnelinginanalganalnganheterojunctioncapturedthroughananalogywithamoscontact AT garniergennie coherenttunnelinginanalganalnganheterojunctioncapturedthroughananalogywithamoscontact AT charlesmatthew coherenttunnelinginanalganalnganheterojunctioncapturedthroughananalogywithamoscontact AT vandendaelewilliam coherenttunnelinginanalganalnganheterojunctioncapturedthroughananalogywithamoscontact AT gillotcharlotte coherenttunnelinginanalganalnganheterojunctioncapturedthroughananalogywithamoscontact AT plissonniermarc coherenttunnelinginanalganalnganheterojunctioncapturedthroughananalogywithamoscontact |