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Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact
Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and show a direct path to capture the energy band diagram of the...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5557989/ https://www.ncbi.nlm.nih.gov/pubmed/28811615 http://dx.doi.org/10.1038/s41598-017-08307-0 |