Direct observation of multiple rotational stacking faults coexisting in freestanding bilayer MoS(2)

Electronic properties of two-dimensional (2D) MoS(2) semiconductors can be modulated by introducing specific defects. One important type of defect in 2D layered materials is known as rotational stacking fault (RSF), but the coexistence of multiple RSFs with different rotational angles was not direct...

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Detalles Bibliográficos
Autores principales: Li, Zuocheng, Yan, Xingxu, Tang, Zhenkun, Huo, Ziyang, Li, Guoliang, Jiao, Liying, Liu, Li-Min, Zhang, Miao, Luo, Jun, Zhu, Jing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5559605/
https://www.ncbi.nlm.nih.gov/pubmed/28814808
http://dx.doi.org/10.1038/s41598-017-07615-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5559605/
https://www.ncbi.nlm.nih.gov/pubmed/28814808
http://dx.doi.org/10.1038/s41598-017-07615-9

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