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Investigations of Phase Transformation in Monocrystalline Silicon at Low Temperatures via Nanoindentation

Nanoindentations of monocrystalline silicon are conducted to investigate the phase transformation process at a temperature range from 292 K to 210 K. The load-displacement curves are obtained and the residual indents are detected by Raman spectra. MD simulations are also conducted to identify the ph...

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Detalles Bibliográficos
Autores principales: Wang, Shunbo, Liu, Hang, Xu, Lixia, Du, Xiancheng, Zhao, Dan, Zhu, Bo, Yu, Miao, Zhao, Hongwei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5561054/
https://www.ncbi.nlm.nih.gov/pubmed/28819254
http://dx.doi.org/10.1038/s41598-017-09411-x