The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE

We investigate the stress evolution of 400 µm-thick freestanding GaN crystals grown from Si substrates by hydride vapour phase epitaxy (HVPE) and the in situ removal of Si substrates. The stress generated in growing GaN can be tuned by varying the thickness of the MOCVD AlGaN/AlN buffer layers. Micr...

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Detalles Bibliográficos
Autores principales: Lee, Moonsang, Mikulik, Dmitry, Yang, Mino, Park, Sungsoo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5561118/
https://www.ncbi.nlm.nih.gov/pubmed/28819151
http://dx.doi.org/10.1038/s41598-017-08905-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5561118/
https://www.ncbi.nlm.nih.gov/pubmed/28819151
http://dx.doi.org/10.1038/s41598-017-08905-y

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