Electrical Stabilization of Surface Resistivity in Epitaxial Graphene Systems by Amorphous Boron Nitride Encapsulation

[Image: see text] Homogeneous monolayer epitaxial graphene (EG) is an ideal candidate for the development of millimeter-sized devices with single-crystal domains. A clean fabrication process was used to produce EG-based devices, with n-type doping level of the order of 10(12) cm(–2). Generally, elec...

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Detalles Bibliográficos
Autores principales: Rigosi, Albert F., Liu, Chieh-I, Glavin, Nicholas R., Yang, Yanfei, Hill, Heather M., Hu, Jiuning, Hight Walker, Angela R., Richter, Curt A., Elmquist, Randolph E., Newell, David B.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2017
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5562289/
https://www.ncbi.nlm.nih.gov/pubmed/28828410
http://dx.doi.org/10.1021/acsomega.7b00341

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5562289/
https://www.ncbi.nlm.nih.gov/pubmed/28828410
http://dx.doi.org/10.1021/acsomega.7b00341

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