Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

Detalles Bibliográficos
Autores principales: Tsykaniuk, Bogdan I., Nikolenko, Andrii S., Strelchuk, Viktor V., Naseka, Viktor M., Mazur, Yuriy I., Ware, Morgan E., DeCuir, Eric A., Sadovyi, Bogdan, Weyher, Jan L., Jakiela, Rafal, Salamo, Gregory J., Belyaev, Alexander E.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Erratum
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5565748/
https://www.ncbi.nlm.nih.gov/pubmed/28828578
http://dx.doi.org/10.1186/s11671-017-2227-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5565748/
https://www.ncbi.nlm.nih.gov/pubmed/28828578
http://dx.doi.org/10.1186/s11671-017-2227-1

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