Excellent low-voltage operating flexible ferroelectric organic transistor nonvolatile memory with a sandwiching ultrathin ferroelectric film

The high operating voltage is a primary issue preventing the commercial application of the ferroelectric organic field-effect transistor (Fe-OFET) nonvolatile memory (NVM). In this work, we propose a novel route to resolve this issue by employing two ultrathin AlO(X) interfacial layers sandwiching a...

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Detalles Bibliográficos
Autores principales: Xu, Ting, Xiang, Lanyi, Xu, Meili, Xie, Wenfa, Wang, Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5566424/
https://www.ncbi.nlm.nih.gov/pubmed/28827595
http://dx.doi.org/10.1038/s41598-017-09533-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5566424/
https://www.ncbi.nlm.nih.gov/pubmed/28827595
http://dx.doi.org/10.1038/s41598-017-09533-2

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