Silicon rich nitride ring resonators for rare – earth doped telecommunications-band amplifiers pumped at the O-band

Ring resonators on silicon rich nitride for potential use as rare-earth doped amplifiers pumped at 1310 nm with amplification at telecommunications-band are designed and characterized. The ring resonators are fabricated on 300 nm and 400 nm silicon rich nitride films and characterized at both 1310 n...

Descripción completa

Detalles Bibliográficos
Autores principales: Xing, P., Chen, G. F. R., Zhao, X., Ng, D. K. T., Tan, M. C., Tan, D. T. H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5567208/
https://www.ncbi.nlm.nih.gov/pubmed/28831178
http://dx.doi.org/10.1038/s41598-017-09732-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5567208/
https://www.ncbi.nlm.nih.gov/pubmed/28831178
http://dx.doi.org/10.1038/s41598-017-09732-x

Ejemplares similares