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Silicon rich nitride ring resonators for rare – earth doped telecommunications-band amplifiers pumped at the O-band
Ring resonators on silicon rich nitride for potential use as rare-earth doped amplifiers pumped at 1310 nm with amplification at telecommunications-band are designed and characterized. The ring resonators are fabricated on 300 nm and 400 nm silicon rich nitride films and characterized at both 1310 n...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5567208/ https://www.ncbi.nlm.nih.gov/pubmed/28831178 http://dx.doi.org/10.1038/s41598-017-09732-x |