Habituation/Fatigue behavior of a synapse memristor based on IGZO–HfO(2) thin film

A synaptic memristor based on IGZO and oxygen-deficient HfO(2) films has been demonstrated. The memristor exhibits a fatigue response to a monotonic stimulus of voltage pulses, which is analogous to the habituation behavior of biological memory. The occurrence of habituation is nearly simultaneous w...

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Detalles Bibliográficos
Autores principales: Jiang, Ran, Ma, Pengfei, Han, Zuyin, Du, Xianghao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5571151/
https://www.ncbi.nlm.nih.gov/pubmed/28839216
http://dx.doi.org/10.1038/s41598-017-09762-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5571151/
https://www.ncbi.nlm.nih.gov/pubmed/28839216
http://dx.doi.org/10.1038/s41598-017-09762-5

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