Habituation/Fatigue behavior of a synapse memristor based on IGZO–HfO(2) thin film

A synaptic memristor based on IGZO and oxygen-deficient HfO(2) films has been demonstrated. The memristor exhibits a fatigue response to a monotonic stimulus of voltage pulses, which is analogous to the habituation behavior of biological memory. The occurrence of habituation is nearly simultaneous w...

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Detalles Bibliográficos
Autores principales: Jiang, Ran, Ma, Pengfei, Han, Zuyin, Du, Xianghao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5571151/
https://www.ncbi.nlm.nih.gov/pubmed/28839216
http://dx.doi.org/10.1038/s41598-017-09762-5
_version_ 1783259300197564416
author Jiang, Ran
Ma, Pengfei
Han, Zuyin
Du, Xianghao
author_facet Jiang, Ran
Ma, Pengfei
Han, Zuyin
Du, Xianghao
author_sort Jiang, Ran
collection PubMed
description A synaptic memristor based on IGZO and oxygen-deficient HfO(2) films has been demonstrated. The memristor exhibits a fatigue response to a monotonic stimulus of voltage pulses, which is analogous to the habituation behavior of biological memory. The occurrence of habituation is nearly simultaneous with the transition from short-term memory to long-term memory. The movement and redistribution of oxygen species with the assistance of polarization in HfO(2) layer are responsible for the above results. The observation of habituation behavior proves the potential prospect of memristor on the mimic of biological neuron.
format Online
Article
Text
id pubmed-5571151
institution National Center for Biotechnology Information
language English
publishDate 2017
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-55711512017-09-01 Habituation/Fatigue behavior of a synapse memristor based on IGZO–HfO(2) thin film Jiang, Ran Ma, Pengfei Han, Zuyin Du, Xianghao Sci Rep Article A synaptic memristor based on IGZO and oxygen-deficient HfO(2) films has been demonstrated. The memristor exhibits a fatigue response to a monotonic stimulus of voltage pulses, which is analogous to the habituation behavior of biological memory. The occurrence of habituation is nearly simultaneous with the transition from short-term memory to long-term memory. The movement and redistribution of oxygen species with the assistance of polarization in HfO(2) layer are responsible for the above results. The observation of habituation behavior proves the potential prospect of memristor on the mimic of biological neuron. Nature Publishing Group UK 2017-08-24 /pmc/articles/PMC5571151/ /pubmed/28839216 http://dx.doi.org/10.1038/s41598-017-09762-5 Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Jiang, Ran
Ma, Pengfei
Han, Zuyin
Du, Xianghao
Habituation/Fatigue behavior of a synapse memristor based on IGZO–HfO(2) thin film
title Habituation/Fatigue behavior of a synapse memristor based on IGZO–HfO(2) thin film
title_full Habituation/Fatigue behavior of a synapse memristor based on IGZO–HfO(2) thin film
title_fullStr Habituation/Fatigue behavior of a synapse memristor based on IGZO–HfO(2) thin film
title_full_unstemmed Habituation/Fatigue behavior of a synapse memristor based on IGZO–HfO(2) thin film
title_short Habituation/Fatigue behavior of a synapse memristor based on IGZO–HfO(2) thin film
title_sort habituation/fatigue behavior of a synapse memristor based on igzo–hfo(2) thin film
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5571151/
https://www.ncbi.nlm.nih.gov/pubmed/28839216
http://dx.doi.org/10.1038/s41598-017-09762-5
work_keys_str_mv AT jiangran habituationfatiguebehaviorofasynapsememristorbasedonigzohfo2thinfilm
AT mapengfei habituationfatiguebehaviorofasynapsememristorbasedonigzohfo2thinfilm
AT hanzuyin habituationfatiguebehaviorofasynapsememristorbasedonigzohfo2thinfilm
AT duxianghao habituationfatiguebehaviorofasynapsememristorbasedonigzohfo2thinfilm

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