Intrinsic Resistance Switching in Amorphous Silicon Suboxides: The Role of Columnar Microstructure

We studied intrinsic resistance switching behaviour in sputter-deposited amorphous silicon suboxide (a-SiO(x)) films with varying degrees of roughness at the oxide-electrode interface. By combining electrical probing measurements, atomic force microscopy (AFM), and scanning transmission electron mic...

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Detalles Bibliográficos
Autores principales: Munde, M. S., Mehonic, A., Ng, W. H., Buckwell, M., Montesi, L., Bosman, M., Shluger, A. L., Kenyon, A. J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5571160/
https://www.ncbi.nlm.nih.gov/pubmed/28839255
http://dx.doi.org/10.1038/s41598-017-09565-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5571160/
https://www.ncbi.nlm.nih.gov/pubmed/28839255
http://dx.doi.org/10.1038/s41598-017-09565-8

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