Formation of a-plane facets in three-dimensional hexagonal GaN structures for photonic devices

Control of the growth front in three-dimensional (3D) hexagonal GaN core structures is crucial for increased performance of light-emitting diodes (LEDs), and other photonic devices. This is due to the fact that InGaN layers formed on different growth facets in 3D structures exhibit various band gaps...

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Detalles Bibliográficos
Autores principales: Lim, Seung-Hyuk, Sim, Young Chul, Yoo, Yang-Seok, Choi, Sunghan, Lee, Sangwon, Cho, Yong-Hoon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5571163/
https://www.ncbi.nlm.nih.gov/pubmed/28839283
http://dx.doi.org/10.1038/s41598-017-09782-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5571163/
https://www.ncbi.nlm.nih.gov/pubmed/28839283
http://dx.doi.org/10.1038/s41598-017-09782-1

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