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Formation of a-plane facets in three-dimensional hexagonal GaN structures for photonic devices
Control of the growth front in three-dimensional (3D) hexagonal GaN core structures is crucial for increased performance of light-emitting diodes (LEDs), and other photonic devices. This is due to the fact that InGaN layers formed on different growth facets in 3D structures exhibit various band gaps...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5571163/ https://www.ncbi.nlm.nih.gov/pubmed/28839283 http://dx.doi.org/10.1038/s41598-017-09782-1 |