Impact of transient currents caused by alternating drain stress in oxide semiconductors

Reliability issues associated with driving metal-oxide semiconductor thin film transistors (TFTs), which may arise from various sequential drain/gate pulse voltage stresses and/or certain environmental parameters, have not received much attention due to the competing desire to characterise the shift...

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Detalles Bibliográficos
Autores principales: Lee, Hyeon-Jun, Cho, Sung Haeng, Abe, Katsumi, Lee, Myoung-Jae, Jung, Minkyung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5574993/
https://www.ncbi.nlm.nih.gov/pubmed/28852104
http://dx.doi.org/10.1038/s41598-017-10285-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5574993/
https://www.ncbi.nlm.nih.gov/pubmed/28852104
http://dx.doi.org/10.1038/s41598-017-10285-2

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