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Impact of transient currents caused by alternating drain stress in oxide semiconductors
Reliability issues associated with driving metal-oxide semiconductor thin film transistors (TFTs), which may arise from various sequential drain/gate pulse voltage stresses and/or certain environmental parameters, have not received much attention due to the competing desire to characterise the shift...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5574993/ https://www.ncbi.nlm.nih.gov/pubmed/28852104 http://dx.doi.org/10.1038/s41598-017-10285-2 |