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Graphene/h-BN Heterostructures for Vertical Architecture of RRAM Design

The development of RRAM is one of the mainstreams for next generation non-volatile memories to replace the conventional charge-based flash memory. More importantly, the simpler structure of RRAM makes it feasible to be integrated into a passive crossbar array for high-density memory applications. By...

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Detalles Bibliográficos
Autores principales: Huang, Yi-Jen, Lee, Si-Chen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5575158/
https://www.ncbi.nlm.nih.gov/pubmed/28851911
http://dx.doi.org/10.1038/s41598-017-08939-2