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Graphene/h-BN Heterostructures for Vertical Architecture of RRAM Design
The development of RRAM is one of the mainstreams for next generation non-volatile memories to replace the conventional charge-based flash memory. More importantly, the simpler structure of RRAM makes it feasible to be integrated into a passive crossbar array for high-density memory applications. By...
Autores principales: | Huang, Yi-Jen, Lee, Si-Chen |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5575158/ https://www.ncbi.nlm.nih.gov/pubmed/28851911 http://dx.doi.org/10.1038/s41598-017-08939-2 |
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