Strong Deep-Level-Emission Photoluminescence in NiO Nanoparticles

Nickel oxide is one of the highly promising semiconducting materials, but its large band gap (3.7 to 4 eV) limits its use in practical applications. Here we report the effect of nickel/oxygen vacancies and interstitial defects on the near-band-edge (NBE) and deep-level-emission (DLE) in various size...

Descripción completa

Detalles Bibliográficos
Autores principales: Gandhi, Ashish Chhaganlal, Wu, Sheng Yun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5575713/
https://www.ncbi.nlm.nih.gov/pubmed/28829388
http://dx.doi.org/10.3390/nano7080231

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5575713/
https://www.ncbi.nlm.nih.gov/pubmed/28829388
http://dx.doi.org/10.3390/nano7080231

Ejemplares similares