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Strong Deep-Level-Emission Photoluminescence in NiO Nanoparticles
Nickel oxide is one of the highly promising semiconducting materials, but its large band gap (3.7 to 4 eV) limits its use in practical applications. Here we report the effect of nickel/oxygen vacancies and interstitial defects on the near-band-edge (NBE) and deep-level-emission (DLE) in various size...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2017
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5575713/ https://www.ncbi.nlm.nih.gov/pubmed/28829388 http://dx.doi.org/10.3390/nano7080231 |