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Customized binary and multi-level HfO(2−x)-based memristors tuned by oxidation conditions

The memristor is a promising candidate for the next generation non-volatile memory, especially based on HfO(2−x), given its compatibility with advanced CMOS technologies. Although various resistive transitions were reported independently, customized binary and multi-level memristors in unified HfO(2...

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Detalles Bibliográficos
Autores principales: He, Weifan, Sun, Huajun, Zhou, Yaxiong, Lu, Ke, Xue, Kanhao, Miao, Xiangshui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5577168/
https://www.ncbi.nlm.nih.gov/pubmed/28855562
http://dx.doi.org/10.1038/s41598-017-09413-9