Cargando…
Customized binary and multi-level HfO(2−x)-based memristors tuned by oxidation conditions
The memristor is a promising candidate for the next generation non-volatile memory, especially based on HfO(2−x), given its compatibility with advanced CMOS technologies. Although various resistive transitions were reported independently, customized binary and multi-level memristors in unified HfO(2...
| Autores principales: | , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5577168/ https://www.ncbi.nlm.nih.gov/pubmed/28855562 http://dx.doi.org/10.1038/s41598-017-09413-9 |