Impacts of the Oxygen Precursor on the Interfacial Properties of La(x)Al(y)O Films Grown by Atomic Layer Deposition on Ge

Amorphous La(x)Al(y)O films were grown on n-type Ge substrate by atomic layer deposition using O(3) and H(2)O as oxidant, respectively. A comparison of the XPS results indicated that a thicker interfacial layer with the component of LaGeO(x) and GeO(x) was formed at O(3)-based La(x)Al(y)O/Ge interfa...

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Detalles Bibliográficos
Autores principales: Zhao, Lu, Liu, Hongxia, Wang, Xing, Wang, Yongte, Wang, Shulong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5578222/
https://www.ncbi.nlm.nih.gov/pubmed/28773213
http://dx.doi.org/10.3390/ma10080856

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5578222/
https://www.ncbi.nlm.nih.gov/pubmed/28773213
http://dx.doi.org/10.3390/ma10080856

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