A Review on Disorder-Driven Metal–Insulator Transition in Crystalline Vacancy-Rich GeSbTe Phase-Change Materials

Metal–insulator transition (MIT) is one of the most essential topics in condensed matter physics and materials science. The accompanied drastic change in electrical resistance can be exploited in electronic devices, such as data storage and memory technology. It is generally accepted that the underl...

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Detalles Bibliográficos
Autores principales: Wang, Jiang-Jing, Xu, Ya-Zhi, Mazzarello, Riccardo, Wuttig, Matthias, Zhang, Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5578228/
https://www.ncbi.nlm.nih.gov/pubmed/28773222
http://dx.doi.org/10.3390/ma10080862

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5578228/
https://www.ncbi.nlm.nih.gov/pubmed/28773222
http://dx.doi.org/10.3390/ma10080862

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