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Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors

We investigated the influence of low-concentration indium (In) doping on the chemical and structural properties of solution-processed zinc oxide (ZnO) films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs). The thermogravimetry and differential...

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Autores principales: Zhang, Xue, Lee, Hyeonju, Kwon, Jung-Hyok, Kim, Eui-Jik, Park, Jaehoon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5578246/
https://www.ncbi.nlm.nih.gov/pubmed/28773242
http://dx.doi.org/10.3390/ma10080880
_version_ 1783260503534993408
author Zhang, Xue
Lee, Hyeonju
Kwon, Jung-Hyok
Kim, Eui-Jik
Park, Jaehoon
author_facet Zhang, Xue
Lee, Hyeonju
Kwon, Jung-Hyok
Kim, Eui-Jik
Park, Jaehoon
author_sort Zhang, Xue
collection PubMed
description We investigated the influence of low-concentration indium (In) doping on the chemical and structural properties of solution-processed zinc oxide (ZnO) films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs). The thermogravimetry and differential scanning calorimetry analysis results showed that thermal annealing at 400 °C for 40 min produces In-doped ZnO films. As the In content of ZnO films was increased from 1% to 9%, the metal-oxygen bonding increased from 5.56% to 71.33%, while the metal-hydroxyl bonding decreased from 72.03% to 9.63%. The X-ray diffraction peaks and field-emission scanning microscope images of the ZnO films with different In concentrations revealed a better crystalline quality and reduced grain size of the solution-processed ZnO thin films. The thickness of the In-doped ZnO films also increased when the In content was increased up to 5%; however, the thickness decreased on further increasing the In content. The field-effect mobility and on/off current ratio of In-doped ZnO TFTs were notably affected by any change in the In concentration. Considering the overall TFT performance, the optimal In doping concentration in the solution-processed ZnO semiconductor was determined to be 5% in this study. These results suggest that low-concentration In incorporation is crucial for modulating the morphological characteristics of solution-processed ZnO thin films and the TFT performance.
format Online
Article
Text
id pubmed-5578246
institution National Center for Biotechnology Information
language English
publishDate 2017
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-55782462017-09-05 Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors Zhang, Xue Lee, Hyeonju Kwon, Jung-Hyok Kim, Eui-Jik Park, Jaehoon Materials (Basel) Article We investigated the influence of low-concentration indium (In) doping on the chemical and structural properties of solution-processed zinc oxide (ZnO) films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs). The thermogravimetry and differential scanning calorimetry analysis results showed that thermal annealing at 400 °C for 40 min produces In-doped ZnO films. As the In content of ZnO films was increased from 1% to 9%, the metal-oxygen bonding increased from 5.56% to 71.33%, while the metal-hydroxyl bonding decreased from 72.03% to 9.63%. The X-ray diffraction peaks and field-emission scanning microscope images of the ZnO films with different In concentrations revealed a better crystalline quality and reduced grain size of the solution-processed ZnO thin films. The thickness of the In-doped ZnO films also increased when the In content was increased up to 5%; however, the thickness decreased on further increasing the In content. The field-effect mobility and on/off current ratio of In-doped ZnO TFTs were notably affected by any change in the In concentration. Considering the overall TFT performance, the optimal In doping concentration in the solution-processed ZnO semiconductor was determined to be 5% in this study. These results suggest that low-concentration In incorporation is crucial for modulating the morphological characteristics of solution-processed ZnO thin films and the TFT performance. MDPI 2017-07-31 /pmc/articles/PMC5578246/ /pubmed/28773242 http://dx.doi.org/10.3390/ma10080880 Text en © 2017 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Zhang, Xue
Lee, Hyeonju
Kwon, Jung-Hyok
Kim, Eui-Jik
Park, Jaehoon
Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors
title Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors
title_full Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors
title_fullStr Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors
title_full_unstemmed Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors
title_short Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors
title_sort low-concentration indium doping in solution-processed zinc oxide films for thin-film transistors
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5578246/
https://www.ncbi.nlm.nih.gov/pubmed/28773242
http://dx.doi.org/10.3390/ma10080880
work_keys_str_mv AT zhangxue lowconcentrationindiumdopinginsolutionprocessedzincoxidefilmsforthinfilmtransistors
AT leehyeonju lowconcentrationindiumdopinginsolutionprocessedzincoxidefilmsforthinfilmtransistors
AT kwonjunghyok lowconcentrationindiumdopinginsolutionprocessedzincoxidefilmsforthinfilmtransistors
AT kimeuijik lowconcentrationindiumdopinginsolutionprocessedzincoxidefilmsforthinfilmtransistors
AT parkjaehoon lowconcentrationindiumdopinginsolutionprocessedzincoxidefilmsforthinfilmtransistors