Cargando…
Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors
We investigated the influence of low-concentration indium (In) doping on the chemical and structural properties of solution-processed zinc oxide (ZnO) films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs). The thermogravimetry and differential...
Autores principales: | Zhang, Xue, Lee, Hyeonju, Kwon, Jung-Hyok, Kim, Eui-Jik, Park, Jaehoon |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2017
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5578246/ https://www.ncbi.nlm.nih.gov/pubmed/28773242 http://dx.doi.org/10.3390/ma10080880 |
Ejemplares similares
-
Solution-Processed Gallium–Tin-Based Oxide Semiconductors for Thin-Film Transistors
por: Zhang, Xue, et al.
Publicado: (2017) -
Morphological Influence of Solution-Processed Zinc Oxide Films on Electrical Characteristics of Thin-Film Transistors
por: Lee, Hyeonju, et al.
Publicado: (2016) -
Investigation of the Electrical Characteristics of Bilayer ZnO/In(2)O(3) Thin-Film Transistors Fabricated by Solution Processing
por: Lee, Hyeonju, et al.
Publicado: (2018) -
Effects of Iodine Doping on Electrical Characteristics of Solution-Processed Copper Oxide Thin-Film Transistors
por: Lee, Hyeonju, et al.
Publicado: (2021) -
Solution-Processed Flexible Fluorine-doped Indium Zinc Oxide Thin-Film Transistors Fabricated on Plastic Film at Low Temperature
por: Seo, Jin-Suk, et al.
Publicado: (2013)