A Simple Method for High-Performance, Solution-Processed, Amorphous ZrO(2) Gate Insulator TFT with a High Concentration Precursor

Solution-processed high-k dielectric TFTs attract much attention since they cost relatively little and have a simple fabrication process. However, it is still a challenge to reduce the leakage of the current density of solution-processed dielectric TFTs. Here, a simple solution method is presented t...

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Detalles Bibliográficos
Autores principales: Cai, Wei, Zhu, Zhennan, Wei, Jinglin, Fang, Zhiqiang, Ning, Honglong, Zheng, Zeke, Zhou, Shangxiong, Yao, Rihui, Peng, Junbiao, Lu, Xubing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5578338/
https://www.ncbi.nlm.nih.gov/pubmed/28825652
http://dx.doi.org/10.3390/ma10080972

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5578338/
https://www.ncbi.nlm.nih.gov/pubmed/28825652
http://dx.doi.org/10.3390/ma10080972

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