A Simple Method for High-Performance, Solution-Processed, Amorphous ZrO(2) Gate Insulator TFT with a High Concentration Precursor

Solution-processed high-k dielectric TFTs attract much attention since they cost relatively little and have a simple fabrication process. However, it is still a challenge to reduce the leakage of the current density of solution-processed dielectric TFTs. Here, a simple solution method is presented towards enhanced performance of ZrO(2) films by intentionally increasing the concentration of precursor. The ZrO(2) films not only exhibit a low leakage current density of 10(−6) A/cm(2) at 10 V and a breakdown field of 2.5 MV/cm, but also demonstrate a saturation mobility of 12.6 cm(2)·V(−1)·s(−1) and a I(on)/I(off) ratio of 10(6) in DC pulse sputtering IGZO-TFTs based on these films. Moreover, the underlying mechanism of influence of precursor concentration on film formation is presented. Higher concentration precursor results in a thicker film within same coating times with reduced ZrO(2)/IGZO interface defects and roughness. It shows the importance of thickness, roughness, and annealing temperature in solution-processed dielectric oxide TFT and provides an approach to precisely control solution-processed oxide films thickness.