Forming-less and Non-Volatile Resistive Switching in WO(X) by Oxygen Vacancy Control at Interfaces

Resistive switching devices are recognized as candidates for next-generation memory devices in that they can replace conventional memory devices. In these devices, a WO(X) film deposited by RF magnetron sputtering with a significant number of oxygen vacancies exhibits a resistive switching property...

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Detalles Bibliográficos
Autores principales: Won, Seokjae, Lee, Sang Yeon, Park, Jucheol, Seo, Hyungtak
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5579250/
https://www.ncbi.nlm.nih.gov/pubmed/28860572
http://dx.doi.org/10.1038/s41598-017-10851-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5579250/
https://www.ncbi.nlm.nih.gov/pubmed/28860572
http://dx.doi.org/10.1038/s41598-017-10851-8

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