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Forming-less and Non-Volatile Resistive Switching in WO(X) by Oxygen Vacancy Control at Interfaces
Resistive switching devices are recognized as candidates for next-generation memory devices in that they can replace conventional memory devices. In these devices, a WO(X) film deposited by RF magnetron sputtering with a significant number of oxygen vacancies exhibits a resistive switching property...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5579250/ https://www.ncbi.nlm.nih.gov/pubmed/28860572 http://dx.doi.org/10.1038/s41598-017-10851-8 |