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A Two-Step Growth Pathway for High Sb Incorporation in GaAsSb Nanowires in the Telecommunication Wavelength Range

Self-catalyzed growth of axial GaAs(1−x)Sb(x) nanowire (NW) arrays with bandgap tuning corresponding to the telecommunication wavelength of 1.3 µm poses a challenge, as the growth mechanism for axial configuration is primarily thermodynamically driven by the vapor-liquid-solid growth process. A syst...

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Detalles Bibliográficos
Autores principales: Ahmad, Estiak, Karim, Md Rezaul, Hafiz, Shihab Bin, Reynolds, C Lewis, Liu, Yang, Iyer, Shanthi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5579295/
https://www.ncbi.nlm.nih.gov/pubmed/28860507
http://dx.doi.org/10.1038/s41598-017-09280-4