Inhomogeneous Oxygen Vacancy Distribution in Semiconductor Gas Sensors: Formation, Migration and Determination on Gas Sensing Characteristics

The density of oxygen vacancies in semiconductor gas sensors was often assumed to be identical throughout the grain in the numerical discussion of the gas-sensing mechanism of the devices. In contrast, the actual devices had grains with inhomogeneous distribution of oxygen vacancy under non-ideal co...

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Detalles Bibliográficos
Autores principales: Liu, Jianqiao, Gao, Yinglin, Wu, Xu, Jin, Guohua, Zhai, Zhaoxia, Liu, Huan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5579549/
https://www.ncbi.nlm.nih.gov/pubmed/28796167
http://dx.doi.org/10.3390/s17081852

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5579549/
https://www.ncbi.nlm.nih.gov/pubmed/28796167
http://dx.doi.org/10.3390/s17081852

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