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A Fast Room Temperature NH(3) Sensor Based on an Al/p-Si/Al Structure with Schottky Electrodes

In this paper, an electrical-based NH(3) sensor with an Al/p-Si/Al structure is reported. The p-Si substrate is microstructured by fs-laser irradiation and then etched with 30% alkaline solution. This sensor works well at room temperature with fast response/recovery for NH(3) gas at 5–100 ppm concen...

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Detalles Bibliográficos
Autores principales: Zhu, Suwan, Liu, Xiaolong, Zhuang, Jun, Zhao, Li
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5580232/
https://www.ncbi.nlm.nih.gov/pubmed/28829383
http://dx.doi.org/10.3390/s17081929