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A Fast Room Temperature NH(3) Sensor Based on an Al/p-Si/Al Structure with Schottky Electrodes
In this paper, an electrical-based NH(3) sensor with an Al/p-Si/Al structure is reported. The p-Si substrate is microstructured by fs-laser irradiation and then etched with 30% alkaline solution. This sensor works well at room temperature with fast response/recovery for NH(3) gas at 5–100 ppm concen...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5580232/ https://www.ncbi.nlm.nih.gov/pubmed/28829383 http://dx.doi.org/10.3390/s17081929 |