Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffraction

Coherent X-ray diffraction was used to measure the type, quantity and the relative distances between stacking faults along the growth direction of two individual wurtzite GaAs nanowires grown by metalorganic vapour epitaxy. The presented approach is based on the general property of the Patterson fun...

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Detalles Bibliográficos
Autores principales: Davtyan, Arman, Lehmann, Sebastian, Kriegner, Dominik, Zamani, Reza R., Dick, Kimberly A., Bahrami, Danial, Al-Hassan, Ali, Leake, Steven J., Pietsch, Ullrich, Holý, Václav
Formato: Online Artículo Texto
Lenguaje:English
Publicado: International Union of Crystallography 2017
Materias:
Research Papers
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5580788/
https://www.ncbi.nlm.nih.gov/pubmed/28862620
http://dx.doi.org/10.1107/S1600577517009584

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5580788/
https://www.ncbi.nlm.nih.gov/pubmed/28862620
http://dx.doi.org/10.1107/S1600577517009584

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