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Quantitative imaging of anti-phase domains by polarity sensitive orientation mapping using electron backscatter diffraction

Advanced structural characterisation techniques which are rapid to use, non-destructive and structurally definitive on the nanoscale are in demand, especially for a detailed understanding of extended-defects and their influence on the properties of materials. We have applied the electron backscatter...

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Autores principales: Naresh-Kumar, G., Vilalta-Clemente, A., Jussila, H., Winkelmann, A., Nolze, G., Vespucci, S., Nagarajan, S., Wilkinson, A. J., Trager-Cowan, C.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5589861/
https://www.ncbi.nlm.nih.gov/pubmed/28883500
http://dx.doi.org/10.1038/s41598-017-11187-z
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author Naresh-Kumar, G.
Vilalta-Clemente, A.
Jussila, H.
Winkelmann, A.
Nolze, G.
Vespucci, S.
Nagarajan, S.
Wilkinson, A. J.
Trager-Cowan, C.
author_facet Naresh-Kumar, G.
Vilalta-Clemente, A.
Jussila, H.
Winkelmann, A.
Nolze, G.
Vespucci, S.
Nagarajan, S.
Wilkinson, A. J.
Trager-Cowan, C.
author_sort Naresh-Kumar, G.
collection PubMed
description Advanced structural characterisation techniques which are rapid to use, non-destructive and structurally definitive on the nanoscale are in demand, especially for a detailed understanding of extended-defects and their influence on the properties of materials. We have applied the electron backscatter diffraction (EBSD) technique in a scanning electron microscope to non-destructively characterise and quantify antiphase domains (APDs) in GaP thin films grown on different (001) Si substrates with different offcuts. We were able to image and quantify APDs by relating the asymmetrical intensity distributions observed in the EBSD patterns acquired experimentally and comparing the same with the dynamical electron diffraction simulations. Additionally mean angular error maps were also plotted using automated cross-correlation based approaches to image APDs. Samples grown on substrates with a 4° offcut from the [110] do not show any APDs, whereas samples grown on the exactly oriented substrates contain APDs. The procedures described in our work can be adopted for characterising a wide range of other material systems possessing non-centrosymmetric point groups.
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spelling pubmed-55898612017-09-13 Quantitative imaging of anti-phase domains by polarity sensitive orientation mapping using electron backscatter diffraction Naresh-Kumar, G. Vilalta-Clemente, A. Jussila, H. Winkelmann, A. Nolze, G. Vespucci, S. Nagarajan, S. Wilkinson, A. J. Trager-Cowan, C. Sci Rep Article Advanced structural characterisation techniques which are rapid to use, non-destructive and structurally definitive on the nanoscale are in demand, especially for a detailed understanding of extended-defects and their influence on the properties of materials. We have applied the electron backscatter diffraction (EBSD) technique in a scanning electron microscope to non-destructively characterise and quantify antiphase domains (APDs) in GaP thin films grown on different (001) Si substrates with different offcuts. We were able to image and quantify APDs by relating the asymmetrical intensity distributions observed in the EBSD patterns acquired experimentally and comparing the same with the dynamical electron diffraction simulations. Additionally mean angular error maps were also plotted using automated cross-correlation based approaches to image APDs. Samples grown on substrates with a 4° offcut from the [110] do not show any APDs, whereas samples grown on the exactly oriented substrates contain APDs. The procedures described in our work can be adopted for characterising a wide range of other material systems possessing non-centrosymmetric point groups. Nature Publishing Group UK 2017-09-07 /pmc/articles/PMC5589861/ /pubmed/28883500 http://dx.doi.org/10.1038/s41598-017-11187-z Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Naresh-Kumar, G.
Vilalta-Clemente, A.
Jussila, H.
Winkelmann, A.
Nolze, G.
Vespucci, S.
Nagarajan, S.
Wilkinson, A. J.
Trager-Cowan, C.
Quantitative imaging of anti-phase domains by polarity sensitive orientation mapping using electron backscatter diffraction
title Quantitative imaging of anti-phase domains by polarity sensitive orientation mapping using electron backscatter diffraction
title_full Quantitative imaging of anti-phase domains by polarity sensitive orientation mapping using electron backscatter diffraction
title_fullStr Quantitative imaging of anti-phase domains by polarity sensitive orientation mapping using electron backscatter diffraction
title_full_unstemmed Quantitative imaging of anti-phase domains by polarity sensitive orientation mapping using electron backscatter diffraction
title_short Quantitative imaging of anti-phase domains by polarity sensitive orientation mapping using electron backscatter diffraction
title_sort quantitative imaging of anti-phase domains by polarity sensitive orientation mapping using electron backscatter diffraction
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5589861/
https://www.ncbi.nlm.nih.gov/pubmed/28883500
http://dx.doi.org/10.1038/s41598-017-11187-z
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