The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer

High-mobility indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are achieved through low-temperature crystallization enabled via a reaction with a transition metal catalytic layer. For conventional amorphous IGZO TFTs, the active layer crystallizes at thermal annealing temperatures of 60...

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Detalles Bibliográficos
Autores principales: Shin, Yeonwoo, Kim, Sang Tae, Kim, Kuntae, Kim, Mi Young, Oh, Saeroonter, Jeong, Jae Kyeong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5589867/
https://www.ncbi.nlm.nih.gov/pubmed/28883475
http://dx.doi.org/10.1038/s41598-017-11461-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5589867/
https://www.ncbi.nlm.nih.gov/pubmed/28883475
http://dx.doi.org/10.1038/s41598-017-11461-0

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