Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo Simulator

In resistive random access memories, modeling conductive filament growing dynamics is important to understand the switching mechanism and variability. In this paper, a universal Monte Carlo simulator is developed based on a cell switching model and a tunneling-based transport model. Driven by extern...

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Detalles Bibliográficos
Autores principales: Li, Yu, Zhang, Meiyun, Long, Shibing, Teng, Jiao, Liu, Qi, Lv, Hangbing, Miranda, Enrique, Suñé, Jordi, Liu, Ming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5593871/
https://www.ncbi.nlm.nih.gov/pubmed/28894146
http://dx.doi.org/10.1038/s41598-017-11165-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5593871/
https://www.ncbi.nlm.nih.gov/pubmed/28894146
http://dx.doi.org/10.1038/s41598-017-11165-5

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