Negative Differential Conductance & Hot-Carrier Avalanching in Monolayer WS2 FETs

The high field phenomena of inter-valley transfer and avalanching breakdown have long been exploited in devices based on conventional semiconductors. In this Article, we demonstrate the manifestation of these effects in atomically-thin WS(2) field-effect transistors. The negative differential conduc...

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Detalles Bibliográficos
Autores principales: He, G., Nathawat, J., Kwan, C.-P., Ramamoorthy, H., Somphonsane, R., Zhao, M., Ghosh, K., Singisetti, U., Perea-López, N., Zhou, C., Elías, A. L., Terrones, M., Gong, Y., Zhang, X., Vajtai, R., Ajayan, P. M., Ferry, D. K., Bird, J. P.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5595880/
https://www.ncbi.nlm.nih.gov/pubmed/28900169
http://dx.doi.org/10.1038/s41598-017-11647-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5595880/
https://www.ncbi.nlm.nih.gov/pubmed/28900169
http://dx.doi.org/10.1038/s41598-017-11647-6

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