Electrical properties and thermal stability in stack structure of HfO(2)/Al(2)O(3)/InSb by atomic layer deposition

Changes in the electrical properties and thermal stability of HfO(2) grown on Al(2)O(3)-passivated InSb by atomic layer deposition (ALD) were investigated. The deposited HfO(2) on InSb at a temperature of 200 °C was in an amorphous phase with low interfacial defect states. During post-deposition ann...

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Detalles Bibliográficos
Autores principales: Baik, Min, Kang, Hang-Kyu, Kang, Yu-Seon, Jeong, Kwang-Sik, An, Youngseo, Choi, Seongheum, Kim, Hyoungsub, Song, Jin-Dong, Cho, Mann-Ho
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5595993/
https://www.ncbi.nlm.nih.gov/pubmed/28900097
http://dx.doi.org/10.1038/s41598-017-09623-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5595993/
https://www.ncbi.nlm.nih.gov/pubmed/28900097
http://dx.doi.org/10.1038/s41598-017-09623-1

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