Enhancement of the Device Performance and the Stability with a Homojunction-structured Tungsten Indium Zinc Oxide Thin Film Transistor

Tungsten-indium-zinc-oxide thin-film transistors (WIZO-TFTs) were fabricated using a radio frequency (RF) co-sputtering system with two types of source/drain (S/D)-electrode material of conducting WIZO (homojunction structure) and the indium-tin oxide (ITO) (heterojunction structure) on the same WIZ...

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Detalles Bibliográficos
Autores principales: Park, Hyun-Woo, Song, Aeran, Choi, Dukhyun, Kim, Hyung-Jun, Kwon, Jang-Yeon, Chung, Kwun-Bum
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5599534/
https://www.ncbi.nlm.nih.gov/pubmed/28912566
http://dx.doi.org/10.1038/s41598-017-12114-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5599534/
https://www.ncbi.nlm.nih.gov/pubmed/28912566
http://dx.doi.org/10.1038/s41598-017-12114-y

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