On current transients in MoS(2) Field Effect Transistors

We present an experimental investigation of slow transients in the gate and drain currents of MoS(2)-based transistors. We focus on the measurement of both the gate and drain currents and, from the comparative analysis of the current transients, we conclude that there are at least two independent tr...

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Detalles Bibliográficos
Autores principales: Macucci, Massimo, Tambellini, Gerry, Ovchinnikov, Dmitry, Kis, Andras, Iannaccone, Giuseppe, Fiori, Gianluca
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5599678/
https://www.ncbi.nlm.nih.gov/pubmed/28912464
http://dx.doi.org/10.1038/s41598-017-11930-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5599678/
https://www.ncbi.nlm.nih.gov/pubmed/28912464
http://dx.doi.org/10.1038/s41598-017-11930-6

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